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| SOT89 NPN SILICON POWER (SWITCHING) TRANSISTOR ISSSUE 1 - NOVEMBER 1998 FEATURES FCX617 C * * * * * 2W POWER DISSIPATION 12A Peak Pulse Current Excellent HFE Characteristics up to 12 Amps Extremely Low Saturation Voltage E.g. 8mv Typ. Extremely Low Equivalent On-resistance; RCE(sat) 50m at 3A E C B Partmarking Detail - 617 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current ** Continuous Collector Current Base Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg VALUE 15 15 5 12 3 500 1 2 -55 to +150 UNIT V V V A A mA W W C recommended Ptot calculated using FR4 measuring 15x15x0.6mm Maximum power dissipation is calculated assuming that the device is mounted on FR4 substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by other suppliers. **Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for these devices Refer to the handling instructions for soldering surface mount components. FCX617 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICES VCE(sat) MIN. 15 15 5 0.3 0.3 0.3 8 70 150 100 100 100 14 100 230 300 400 1.0 1.0 TYP. MAX. UNIT V V V nA nA nA mV mV mV mV mV V V CONDITIONS. IC=100A IC=10mA* IE=100A VCB=10V VEB=4V VCES=10V IC=0.1A, IB=10mA* IC=1A, IB=10mA* IC=3A, IB=50mA* IC=4A, IB=50mA* IC=5A, IB=50mA* IC=3A, IB=50mA* IC=3A, VCE=2V* IC=10mA, VCE=2V* IC=200mA, VCE=2V* IC=3A, VCE=2V* IC=5A, VCE=2V* IC=12A, VCE=2V* MHz 40 pF ns ns IC=50mA, VCE=10V f=50MHz VCB=10V, f=1MHz VCC=10V, IC=3A IB1=IB2=50mA Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio VBE(sat) VBE(on) hFE 200 300 200 150 80 0.89 0.82 415 450 320 240 80 120 30 120 160 Transition Frequency Output Capacitance Turn-On Time Turn-Off Time fT Cobo t(on) t(off) *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% FCX617 TYPICAL CHARACTERISTICS 1 +25 C 0.4 IC/IB=60 0.3 100m 0.2 100C 10m 25C IC/IB=100 IC/IB=60 IC/IB=10 0.1 -55C 1m 1m 0.0 10m 100m 1 10 1mA 10mA 100mA 1A 10A 10A IC - Collector Current (A) Collector Current VCE(SAT) v IC VCE(SAT) vs IC 1.2 1.0 0.8 100C VCE=2V 1.4 450 1.2 1.0 0.8 IC/IB=60 25C -55C 25C 0.6 0.4 0.2 0.0 -55C 225 0.6 0.4 0.2 100C 0 10mA 100mA 1A 10A 100A 1mA 0.0 1mA 10mA 100mA 1A 10A 100A Collector Current Collector Current hFE vs IC VBE(SAT) vs IC 1.4 1.2 1.0 0.8 0.6 VCE=2V 100 -55C 25C 100C 10 0.4 0.2 0.0 1mA 1 DC 1s 100ms 10ms 1ms 100us 10mA 100mA 1A 10A 100A 0.1 100m 1 10 100 Collector Current VCE (VOLTS) VBE(ON) vs IC Safe Operating Area |
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